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N Channel Enhancement Mode MOSFET
ST2300
4A
DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 20V/6.0A, RDS(ON) = 22m (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 26m @VGS = 4.5V 20V/4.5A, RDS(ON) = 29m @VGS = 2.5V 20V/4.0A, RDS(ON) = 35m @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23-3L package design
3 D G 1 1.Gate 2.Source S 2 3.Drain
PART MARKING SOT-23-3L
3
42YA
1 Y: Year Code 2 A: Process Code
ORDERING INFORMATION Part Number ST2300S23RG Package SOT-23-3L Part Marking 42YA
Process Code : A ~ Z ; a ~ z ST2300S23RG ; S23 : SOT23-3L R : Tape Reel ; G : Pb - Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1
N Channel Enhancement Mode MOSFET
ST2300
4A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70
Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA
Typical 20 12 4.0 3.0 13 1.0 1.25 0.8 150 -55/150 140
Unit V V A A A W /W
2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1
N Channel Enhancement Mode MOSFET
ST2300
4A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current
Symbol
Condition
Min Typ Max Unit
V(BR)DSS VGS(th) IGSS IDSS ID(on)
VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=20V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=85 VDS5V,VGS=4.5V VGS=10V,ID=6.0A VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A VDS=15V,ID=5.0A IS=1.7A,VGS=0V
20 0.4 1.0 100 1 10 6
0.022 0.026 0.029 0.035
V V nA
uA A
Drain-source On-Resistance
RDS(on)
Forward Tranconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
gfs VSD
30 0.9 1.3
S V
Qg Qgs Qgd Ciss Coss Crss td(on)
tr
VDS=10V VGS=4.5V ID5A VDS=10V VGS=0V F=1MHz VDD=10V RL=10 ID=1A VGEN=4.5V RG=6
10 1.4 2.1 600 120 100 15 40 45 30
13 nC
pF 25 60 65 40 nS
td(off)
tf
3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1
N Channel Enhancement Mode MOSFET
ST2300
4A
TYPICAL CHARACTERICTICS (25 Unless noted)
4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1
N Channel Enhancement Mode MOSFET
ST2300
4A
TYPICAL CHARACTERICTICS (25 Unless noted)
5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1
N Channel Enhancement Mode MOSFET
ST2300
4A
TYPICAL CHARACTERICTICS
6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1
N Channel Enhancement Mode MOSFET
ST2300
4A
SOT-23-3L PACKAGE OUTLINE
7 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1

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